Resonant-Tunnelling Diodes as PUF Building Blocks

Strong Physical Uncloneable Functions using Arrays of Resonant Tunnelling Diodes

Resonant Tunnelling Optoelectronic Circuits

Nowadays, most communication networks such as local area networks (LANs), metropolitan area networks (MANs), and wide area networks (WANs) have replaced or are about to replace coaxial cable or twisted copper wire with fiber optical cables. Light-wave communication systems comprise a transmitter based on a visible or near-infrared light source, whose carrier is modulated by the information sign...

Photoluminescence Characterisation of High Current Density Resonant Tunnelling Diodes for Terahertz Applications

High structural perfection, wafer uniformity, and reproducibility are key parameters for high-volume, low cost manufacture of resonant tunnelling diode (RTD) terahertz (THz) devices. Low-cost, rapid, and non-destructive techniques are required for the development of such devices. In this paper, we report photoluminescence (PL) spectroscopy as a non-destructive characterisation technique for hig...

Resonant tunnelling diodes based on molecular wires incorporating saturated spacers: a quantum-chemical study

The demand for increased miniaturization of integrated circuits has opened the way to the emerging field of molecular electronics. Recent experimental studies have established that single molecules or a finite ensemble of self-assembled molecules can perform the basic functions of conventional electronic components (i.e., transistors, wires and diodes). In particular, it has been demonstrated t...

Temperature dependent DC=RF performance of Si=SiGe resonant interband tunnelling diodes

The temperature dependent DC=RF performance of Si-based resonant interband tunnelling diodes (RITDs) grown by low temperature molecular beam epitaxy was studied. Both DC and RF performance were measured at various temperatures from 20 to 150 C. At 20 C, the RITD exhibits a peak current density ( Jp) of 22 kA=cm 2 with peak-to-valley current ratio (PVCR) of 2.0. The maximum resistive cutoff freq...